Hyperion™ System for Semiconductors

The Thermo Scientific™ Hyperion II System offers fast, accurate transistor probing for electrical characterization and fault localization in support of semiconductor technology development, yield engineering and device reliability improvement. The unparalleled stability of the Hyperion II System enables nanoprobing down to the 10nm technology node and beyond. The Hyperion II System's SPM technology enables PicoCurrent imaging, which is a technique to rapidly identify shorts, opens, leakage paths and resistive contacts with more than 1,000 times the sensitivity of passive voltage contrast. The scanning capacitance microscopy (SCM) module provides image-based fault localization for SOI wafers, as well as high-resolution dopant profiling.

Capabilities 

• Proven nanoprobing solution for 10nm technology.
• Configurable with four, six or eight probes for added flexibility and capability.
• Auto tip exchange and auto tip approach for increased productivity and ease of use. 

Measurement modes 

The Hyperion II System’s advanced measurement modes include: 

• Low-noise, high-resolution capacitance-voltage (C-V) to study oxide layers and interface traps.
• Pulsed IV to identify open and resistive gate defects.
• Elevated temperature probing to study device reliability.

Current voltage (I-V) measurements

Probing multiple transistors within the target area to localize a fault can be time-consuming. The Hyperion II System combines PicoCurrent imaging with I-V probing to quickly find potential defects and measure current-voltage curves, without introducing measurement-related shifts.

Capacitance-voltage (C-V) measurements

C-V is used to study oxide layers, interface traps and charge carrier densities. The Hyperion II System offers high-resolution C-V with excellent impedance control, low leakage and very low noise.

Pulsed I-V measurements

Pulsed I-V is used for studying self-heating of SOI and trapped charge in high-k dielectric. The Hyperion II System enables high-speed testing of devices with less than one nanosecond rise time.