Analytical Instruments for Power Semiconductor Devices

Optimizing power semiconductor devices with comprehensive analytical instruments

Successful characterization and failure analysis are important steps in optimizing the yield and reliability of emerging compound semiconductor technologies. With our advanced tools and leading expertise, Thermo Fisher Scientific offers tailored solutions for the unique challenges in power device manufacturing. We are dedicated to supporting you with the most comprehensive instrument portfolio, optimized for electrical and physical analysis in power devices.

Instruments for crystalline defect analysis

Apreo 2 SEM

The Thermo Scientific Apreo 2 SEM offers multiple electron channeling contrast imaging analysis modes and detection capabilities for crystalline defect analysis. Combined with Thermo Fisher Maps Software, it provides defect density information with large area and multi-scale automated acquisition. 

Helios 5 FX DualBeam FIB-SEM

The Thermo Scientific Helios 5 FX DualBeam FIB-SEM enables a highly efficient crystalline defect analysis workflow for substrates and patterned devices, including electron channeling contrast imaging localization, sample preparation, and in-situ STEM analysis.

Instruments for buried defect analysis in power semiconductors

The unique material properties and operating range of compound semiconductors require specialized techniques for analyzing power devices. For one of the most difficult steps in your analysis, we offer a wide portfolio of instruments to help localize buried defects.

Elite VX System

The Thermo Scientific Elite VX System provides 3D localization with maximum signal-to-noise, sensitivity, and resolution for high-voltage power devices. An optional laser scanning microscope enables high-resolution OBIRCH.

Meridian S System

The Thermo Scientific Meridian S System is designed to perform inverted photon emission and laser scanning microscopy for reliability failures in high-power devices. Dual-side probing and an upgrade path to dynamic optical fault isolation further enhance its capabilities.

Hyperion II System

The Thermo Scientific Hyperion II System offers fast, accurate transistor probing for electrical characterization and fault localization. The exceptional stability and sensitivity enable rapid identification of shorts, opens, leakage paths, and resistive contacts in power devices.

Helios 5 Hydra DualBeam FIB-SEM

The Thermo Scientific Helios 5 Hydra DualBeam FIB-SEM has a selectable ion (Xe, Ar, O, and N) column that enables superior cross-section quality, throughput, and gallium-free TEM sample preparation for compound semiconductor and device packaging materials. Combine with powerful Thermo Scientific Avizo Software for high-resolution 3D data for process monitoring and defect detection.

Talos F200E TEM

The Thermo Scientific Talos F200E TEM combines low-distortion atomic-resolution imaging and time-resolved energy dispersive X-ray spectroscopy (EDS) to deliver benchmark results for precise metrology and analysis of elemental and electrical defects in compound semiconductors.

MK.4TE System

The Thermo Scientific MK.4 System is a versatile, powerful, high-yield test system capable of outpacing evolving quality regulations, especially stringent automotive standards for power devices. With leading capabilities for high current and temperature latch-up testing, flexible pin configuration, and advanced switching algorithms, our ESD test solutions consistently out-perform industry requirements.

For Research Use Only. Not for use in diagnostic procedures.